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IGBTs
Renesas insulated-gate bipolar transistors (IGBTs) realize both low saturation voltage and fast switching through thin wafer technology. Product series suitable for a variety of applications are available, and help to cut down all kinds of power loss.
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Power Discretes
Our power discrete products are high-quality solutions for a wide range of high-voltage and high-power applications. They include a variety of high-voltage Switch Mode Power Supply (SMPS) transistors—Insulated-Gate Bipolar Transistors (IGBTs) Silicon Carbide (SiC) MOSFETs and Silicon MOSFETs—Diodes and Radio Frequency (RF) MOSFETs. Many of our products are offered in single- and combi-packaged options across a variety of voltage ratings, currents, and package styles.
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5KVA to 100KVA Industrial UPS (3Ø – 1Ø)
NSP Series 5KVA to 100KVA
- Designed for powering critical Industrial and IT systems- DSP controlled IGBT based PWM technology- Design topology enables N+1 parallel redundancy- Industrial grade high speed CAN bus communication- User Friendly Matrix LCD and LED mimic front control and digital monitoring- Fully rated make before break maintenance bypass operation- Optional break-less load transfer via static switch- Low harmonic distortion- High crest factor tolerance and dynamic stability- Lower TCO- Continuous full rated power at ambient as high as 45°C- N+1 Parallel operation of UPS without any common hardware- Advanced Communication Capability (RS485/Modbus/SNMP)- High branch fuse clearing capacity- On-line battery bank test without load disconnection- Compact, elegant, and light weight enclosure- Easy installation with wheels for maneuverability and front bottom terminals
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IGBTs
ST offers a comprehensive portfolio of IGBTs (Insulated Gate Bipolar Transistors) ranging from 300 to 1700 V, both in planar punch-through (PT) and trench-gate field-stop (TFS) technologies. IGBTs belong to the STPOWER family.
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Test System
ITC57300
The ITC57300 Dynamic Parametric Test System mainframe accepts Test Heads that perform nondestructive transient measurements on semiconductor devices such as Insulated Gate Bipolar Transistors (IGBT), power MOSFETs, diodes, and other bipolar devices(requires additional optional bias power supplies and custom personality boards). Included in the mainframe are all test equipment and software necessary to analyze and perform resistive and inductive switching time, switching losses, gate charge, Trr/Qrr, and other transient tests.
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Condenser for Damping
DAM3
Lifasa - International Capacitors, SA
DAM switching capacitors are used to protect semiconductors (IGBT transistors). These are charged and discharged repeatedly with high current peaks.
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IGBT For IH
IGBT devices for induction heating (IH) (soft switching), recommended for 10 to 100 kHz frequencies, and not guaranteed against short circuit.
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Automated Discrete Semiconductor Tester (ATE)
5000E
Same Proven Technology as all 5000 Series Testers. High Speed Single Test Measure. Capable of Testing Multiple and Mixed Devices. 1KV Standard, 2KV Optional. 1NA to 50A Standard, 100A Optional. 0.1NA Resolution. Complete Self Test. Auto-Calibration. RDSON to 0.1MOHM Resolution. Windows Application Software. Optional Scanner. Optional Wafer Mapping. Optional Curve Trace. MOSFET, IGBT, J-FETTriac, SCR, Sidac, Diac, Quadrac, STS, SBS Transistor, Diode, Opto, Zener Regulator, MOV, Relay. UNDER $23,000.00
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Capacitor to Dampen
DAM2
Lifasa - International Capacitors, SA
DAM switching capacitors are used to protect semiconductors (IGBT transistors). These are charged and discharged repeatedly with high current peaks.
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Power Supplies
Rugged and Reliable: Power Supplies from Analytic SystemsAnalytic Systems' Power Supplies use switch-mode technology with powerful IGBT (insulated-gate bipolar transistor) switching transistors, ensuring reliability and efficiency at minimal size. In addition, our Power Supplies feature:
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IGBT Power Supply, 24 KW, Output 0 to 16 VDC, 1500 AMPS, P/N 6133C
IGBT Power Supply, 24 KW, P/N 6133CInput: 480 VAC, 3 PH, 60 HzOutput: 0 to 16 VDC, 1500 AmpsRipple does not degrade when the output voltage is reducedDigital remote with Voltmeter and Ammeter and potentiometers includedDimensions: 20.00”W x 20”H x 24.5”D.Estimated weight: 200 lbs.
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Parametric Curve Tracer Configurations
Keithley PCT
Developing and using MOSFETS, IGBTs, diodes and other high power devices requires comprehensive device-level characterization such as breakdown voltage, on-state current and capacitance measurements. Keithley's line of high power Parametric Curve Tracer configurations supports the full spectrum of device types and test parameters. Keithley's Parametric Curve Tracer configurations include everything necessary for the characterization engineer to develop a complete test system quickly.
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High Force Large Area Bond Tester
Sigma HF
- For high force and large area- Typically for IGBT, power modules and batteries up to 1000 kgf- High axis speed- Deep access up to 80 mm- SEMI S2 safety cabinet with visual feedback- Flexible positioning of multiple work holders
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IGBT Drive
IGBT gate drive photocouplers (optocouplers) are optically coupled isolators containing a GaAlAs LED on the input side and a photo diode, signal processing circuit and power output transistor on the output side in a single chip. This coupler is designed specifically to provide high common mode transient immunity (CMR) and a high output current, and has an active miller clamp and high switching speed, making it ideal for driving IGBTs and MOS FETs.
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Rail Traction Inverter Test System
The rail inverter test system uses a pulse test methodology to verify proper operation of the IGBT switching elements in a subway car motor control. The system is designed to verify proper commutation of the switching elements. A large capacitor bank allows testing at DC voltages up to 1kV and peak currents of up to 3kA into reactive loads.The system also integrates self test capabilities and safe-to-turn-on (STTO) diagnostics to ensure no gross faults are present prior to the application of high voltages. Further the system includes dielectric withstand (hi-pot) test capability to ensure electrical safety.
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Power device test system
This system is suitable for DC testing of IGBT, IGBT module (1in1～7in1). Built-in hi-current switching relay circuit inside test head, it is capable ofDC testing from device itself to module. Highly accurate repeatability testing is available by high speed rise time which is suppressed its heat in hi-current
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Inverter
INV 500VA to 10kVA
*19 "inverter up to 4000VA*Efficiency> 88%*Can be connected in parallel*Without 50Hz transformer*robust IGBT output stage
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Temporary Bonding andDebonding Systems
Increased demand for applications based on thin wafers and thin microelectronic-substrates result in the need for processing and handling of thin- and ultra-thin substrates during the manufacturing step. Thin substrates in the area of IC manufacturing (like memory, CMOS, 3D-TSV integration or ChipCard applications), power devices (e.g. IGBTs), compound semiconductors (e.g. for high brightness LEDs or RF-power amplifiers), as well as emerging technologies that also involve thin or flexible substrates (MEMS; RFID-tags, flexible displays, etc.) require reliable handling and support techniques in order to ensure safe processing.
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Design Topologies
By using these design topologies, you can quickly and easily find appropriate power devices (IGBTs) for your power supply circuit.
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IGBT Power Supply, 120 KW, 0 to 16 VDC, 7500 AMPS, P/N 6132C
IGBT Power Supply, 120 KW, P/N 6132CInput: 480 VAC, 3 PH, 60 HzOutput: 0 to 16 VDC, 7500 AmpsRipple does not degrade when the output voltage is reducedDigital remote with Voltmeter and Ammeter and potentiometers includedDimensions: 20.00”W x 67”H x 24.5”D.Estimated weight: 600 lbs.
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Insulated Gate Bipolar Transistors
The Bourns® IGBT discrete BID series combines technology from a MOS gate and a bipolar transistor, creating the right component for high voltage and high current applications. This device uses advanced Trench-Gate Field-Stop technology providing greater control of the dynamic characteristics while resulting in a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses.
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Static Frequency Converter Systems with Built-in Isolation System
FC3X Series
- VFI independent output as per IEC62040- User friendly controls and indications- Compact design with inbuilt transformer- Rugged and field proven for Industrial and Defence application- Ultra light weight- Higher efficiency of operation means significantly lower running costs- State of the art IGBT based PWM technology, to increase crest factor tolerance & dynamic stability- Continuously delivers full output power at ambient as high as 45ºC- Can feed upto 400% rated current for half cycle- Very high MTBF
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Power Discrete Tester
Mostrak-2
M2 test system has multiple test generators which cover static and dynamic test procedures. It is our first truly modular tester which allows for the system to be upgraded and expanded when needed. M2 are designed to get the tester as close as possible to the handler interface and operator at the highest possible speeds. M2 is capable of HV (3 kV) and LV (600A) testing and has dynamic switching capabilities up to 1200V. MOSTRAK systems can test the following device types: MOSFET, IGBT, Bipolar transistor, Diode - rectifiers, Thyristor (SCR) - Triac, Linear voltage regulator (VReg), Transient voltage suppressor (TVS).
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Air Core Line & Load Reactors
Line and load reactors are generally serial-connected to the input and/or output terminals of three phase equipment such as motor speed controllers, inverters and UPS systems. These equipment make use of semiconductor switches such as IGBTs, thyristors, and diodes and therefore create harmonic distortion and high switching over-voltages (dv/dt). Use of such equipment has been becoming more widespread as the technology advances. However, the negative effects of these equipment should not be overlooked.
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Test System Mainframe
ITC59000
The ITC59000 Test Platform is a desktop DynamicParametric Test System mainframe. The ITC59000Test Platform accepts up to four Test MeasurementUnits (TMUs) that perform transient measurements onsemiconductor devices such as power MOSFETs,IGBTs, and diodes.
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Unclamped Inductive Load Tester
ITC55300C
Model ITC55300C performs ruggedness testing of power MOSFETs, discretes and modules and IGBTs, discretes and modules. It also tests single and dual diodes, and forward and reverse bias of IGBTs when used with an optional ITC55-RSF Output Selector Box.
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AMIDA IGBT Tester
600
KVI Source: 1 Channel 4Q V/I Source; ±1000V, ±10mA Source ability; V/I read back at 16 bits resolutions under 100Ks sampling rate ; ±0.2% accurate reading of Range
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dv/dt Filters
dV/dT Output Filter Modules effectively protect motors against these high voltage spikes due to the use of motor cables between IGBT based motor drives and motors.
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LV Iron Core Line & Load Reactors
Line and load reactors are generally serial-connected to the input and/or output terminals of three phase equipment such as motor speed controllers, inverters and UPS systems. These equipment make use of semiconductor switches such as IGBTs, thyristors, and diodes and therefore create harmonic distortion and high switching over-voltages (dv/dt). Use of such equipment has been becoming more widespread as the technology advances. However, the negative effects of these equipment should not be overlooked.
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IGBT Drivers
These products directly drive Renesas IGBTs for strobe, simplifying circuit design.
