MOSFET
Metal Oxide Semiconductor Field Effect Transistor
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AMIDA ATI 600 Tester
AMIDA ATI 600 Tester is a dedicated test system for semiconductor components (MOSFET, BJT, DIODE, ... etc.), which can accurately and quickly measure product parameters through form filling and editable program control. In practical applications, AMIDA ATI 600 Tester is the best choice for users, whether it is CP or FT mass production testing, or research projects of component characteristics.
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Modules - Modules, MOSFET
Vishay's high-voltage MOSFET modules are a range of devices with voltage ratings of 100 V or 500 V and available in full-bridge or single-switch configurations.
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1584W to 2500W - Single Output
HFE Series
*1U rackmount containing up to 5 units*Up to 29.2W/in³ power density*Internal ORing MOSFET & Current Share*High Efficiency*Up to 9,500W in 1U rack*PMBus™(I2C) and LAN options
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MOSFETs
Vishay is one of the world's foremost manufacturers of power MOSFETs. The Vishay Siliconix MOSFET product line includes a diverse range of advanced technologies in more than 30 package types, from the chipscale MICRO FOOT® and thermally advanced PowerPAK® families to the classic “TO” transistor outline. Single- and multi-die MOSFETs are available with integrated features such as Schottky body diodes and ESD protection, while our unique PowerPAIR® devices combine optimized combinations of MOSFETs for synchronous buck converters and other applications in a single package.
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SiC MOSFETs
Bring the advantages of innovative wide bandgap materials (WBG) to your next design thanks to SiC MOSFETs. With an extended voltage range, from 650 to 2200 V, ST's silicon carbide MOSFETs offer one of the most advanced technology platforms featuring excellent switching performance combined with very low on-state resistance per area.
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Half, Full Bridge & Three-Phase Drivers For Automotive
Renesas' AEC-Q100 qualified 100V half-bridge drivers safely drive MOSFETs for bidirectional controllers in 12V to 48V automotive hybrid powertrains. The advanced ISL784x4 MOSFET driver family enables high current DC/DC conversion with adjustable dead time and maximum efficiency. The ISL784x4 drivers are also well suited for 12V to 24V bidirectional DC/DC converters, as well as other high current buck or boost applications.
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Thermal Characterization Testing Services
Thermal Engineering Associates, Inc.
Thermal Characterization - TEA offers this service to customers having need for precise thermal parameter values for product data sheets, purchase specifications, specific application configurations, and/or device comparisons. This service is offered for a wide range of Discrete Devices (i.e., Bipolar Junction Transistors, MOSFETs, IGBTs, Diodes, SCRs, Triacs) and Integrated Circuits (i.e., digital, linear and mixed-signal devices).
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PathWave IC-CAP PSP Model Extraction Package
W7021E
The W7021E PathWave IC-CAP PSP Model Extraction Package provides measurement and extraction procedures for PSP, a CMC industry-standard model advanced surface potential model for MOSFET devices.
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General Purpose Low-side MOSFET Drivers
Renesas' family of low-side FET drivers are very high-speed matched dual-drivers capable of delivering peak currents of 2.0 amps into highly capacitive loads and excellent at driving large capacitive loads with minimal delay and switching times. The high-speed performance is achieved by means of a proprietary "Turbo-Driver" circuit that speeds up input stages by tapping the wider voltage swing at the output. Improved speed and drive capability are enhanced by matched rise and fall delay times. These matched delays maintain the integrity of input-to-output pulse-widths to reduce timing errors and clock skew problems. This improved performance is accompanied by a 10 fold reduction in supply currents over bipolar drivers, yet without the delay time problems commonly associated with CMOS devices. Dynamic switching losses are minimized with non-overlapped drive techniques.
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PathWave IC-CAP BSIM4 Model Extraction Package
W7025E
The W7025E PathWave IC-CAP BSIM4 Model Extraction Package provides measurement and extraction procedures for the BSIM4 industry-standard model for MOSFET devices.
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Active Switching Rectifiers, 2 KW, P/N 6016C
- Active Switching Rectifier, 2 KW, P/N 6016C- Input Range: 9 VAC to 35 VAC, 3 PH- Frequency Range: DC to 10 kHz- DC output: 13.5 VDC, 70 Amps without any heatsink (Test #1)- DC output: 13.5 VDC, 150 Amps with heatsink (Test #2)- Dimensions: 8″W x 8″L x 3″H or similar- AC to DC and DC to DC applications- Generates less heat as power MOSFET Switching is used- The output voltage is the same as the input voltage
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Test System Mainframe
ITC59000
The ITC59000 Test Platform is a desktop DynamicParametric Test System mainframe. The ITC59000Test Platform accepts up to four Test MeasurementUnits (TMUs) that perform transient measurements onsemiconductor devices such as power MOSFETs,IGBTs, and diodes.
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Medium & High Voltage Pulse Generators (Rise Time > 1 ns)
Offer fast medium voltage pulsing with high current capability. These models are ideal for driving solenoids, pulse testing of MOSFETs, and other applications.
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Test System
ITC57300
The ITC57300 Dynamic Parametric Test System mainframe accepts Test Heads that perform nondestructive transient measurements on semiconductor devices such as Insulated Gate Bipolar Transistors (IGBT), power MOSFETs, diodes, and other bipolar devices(requires additional optional bias power supplies and custom personality boards). Included in the mainframe are all test equipment and software necessary to analyze and perform resistive and inductive switching time, switching losses, gate charge, Trr/Qrr, and other transient tests.
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PCIe and VPX Compatible Adapter Carrier
PCIe2VPX3UX4
The power supply designs utilize switching regulators controlling MOSFET´s. An LC filter insures clean power at the VPX device. The PCIe gold fingers are rated for 1.1A each, and a total of 5.5A on the +12V rail. 55W are available to the card after power conversion.
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Atlas DCA Semiconductor Analyser
DCA55
Intelligent and flexible semiconductor analyser. Connect any way round! The DCA55 then displays the following on its backlit alphanumeric display:- Component type (such as NPN transistor, P-Ch MOSFET, LED, diode etc)- Pinout information (such as Base, Emitter, Collector etc)- Parameter measurement (hFE, Vbe, Vf, leakage current etc)
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Modules - Modules, Automotive
Automotive modules from Vishay feature a range of technologies including FRED Pt®, High Voltage, MOSFETs, and Silicon Carbide (SiC).
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Discrete Devices Test
FTI 1000
The FTI 1000 tester consists of independent test channels that allow all DC and AC MOSFET parameters to be tested either separately, or in one handler insertion or prober touch-down.
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Relays & Contactors
Panasonic Industrial Devices Sales Company of America
Relay options include Panasonic's exclusive PhotoMOS® Semiconductor Relays (otherwise known as Photo, Photo Voltaic, Solid State or MOS-FET Relays) along with Power, Signal, Automotive and High Frequency Relays.
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DCDC
QQA Series
The QQA series features the latest in MOSFET design, state of the art surface mount technology, and offers a 4:1 ultra-wide input range, and efficiencies greater than 80% (typ). Features include continuous short circuit protection, 500 Vdc I/O isolation, and an operating temperature range of -25°C to +71°C with no derating. All models are packaged in a six-sided shielded miniature case measuring only 1.0” x 2.0” x 0.4” high.
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DCDC
DP Series
The DP family is an economically priced high performance series of regulated DC/DC converters offering single and dual outputs. Features include MOSFET design operating at a switching frequency of 100Khz, continuous short circuit protection, LC input filter, 500 Vdc I/O isolation, and an operating temperature range of -25°C to +71°C with no derating. These miniature converters maintain excellent regulation over varying line and load conditions (0.2% for line and 0.5% for load). They are packaged in an IC compatible 24 pin DIP configuration measuring 1.25” x 0.8” x 0.4” high.
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PathWave IC-CAP BSIMSOI Model Extraction Package
W7023E
The W7023E PathWave IC-CAP BSIMSOI Model Extraction Package provides measurement and extraction procedures for BSIMSOI industry-standard model for Silicon-On-Substrate (SOI) MOSFET devices.
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Integrated Board Power Management Functions For The Forward Thinking Engineer
Power Manager II
*Up to 12 differential voltage sensors with immunity to noise on ground plane*Voltage trimming to within 1%*Ruggedized CPLD with up to 48 macrocells for sequencing and supervisory signal logic*Large operating power supply range (3.3 V + 20% to 3.3 V -15%)*Up to 4 High-Voltage MOSFET Driver Outputs*Voltage Measurement with 10-bit ADC through I2C*Up to 8 On-chip DACs for Margining and Trimming
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Wide Bandgap Transistors
The key for the next essential step towards a more energy-efficient world lies in the use of new materials, such as wide bandgap semiconductors (WBG) which allow for increased power efficiency, smaller size, lighter weight, lower system cost or all of these together. STMicroelectronics offers the broadest product and technology portfolio of silicon carbide (MOSFETs) and gallium-nitride-based (e-mode HEMT) devices, covering bare dies, discretes and modules belonging to the STPOWER family.
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MOSFETs, MESFETs, and Schottky Diodes
Semiconductor Module
The Semiconductor Module allows for detailed analysis of semiconductor device operation at the fundamental physics level. The module is based on the drift-diffusion equations, using isothermal or nonisothermal transport models. It is useful for simulating a range of practical devices including bipolar, metal semiconductor field-effect transistors (MESFETs), metal-oxide-semiconductor field-effect transistors (MOSFETs), Schottky diodes, thyristors, and P-N junctions.
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MOSFETs
Products for a variety of applications, such as power supply, motor drive, high frequency amplification, and load switches.
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Discrete & Power Modules
A product portfolio that offers full spectrum of high, medium and low voltage power discrete devices along with advanced power module solutions, including IGBT, MOSFET, SiC, Si/SiC Hybrid, Diode, SiC Diode, and Intelligent Power Modules (IPMs).
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Backend Test For Packaging Devices
Power MOSFETs need a lot of different tests. We understand backend test, and have over 80% of our installations used in this application, operational 24hrs every day delivering fully tested and QA approved products at throughput rates up to 20kuph. Backend test, for power devices in particular, has a diverse, but well-established list of technical demands to detect both failures and failure mechanisms.
