Memory Device
directly accessible computer's internal or main memory.
See Also: Memory, Memory Test, DDR, NAND, DRAM, RAM, ROM, Memory Testers, DUT
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Product
PLD ISP Feature, GTE 10.00p
K8220B
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The PLD ISP feature allows the test developer engineer to specify a configuration bitstream file in VCL digital test file, much like programming a Flash memory device. The PLD ISP feature supports multiple PLD configuration data formats are supported including. Serial Vector Format (SVF), Standard Test And Programming Language (STAPL), Jam, Jam Byte Code (JBC) object files.
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Product
Memory Test Systems
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ICs that record and retain data are called memory devices. Our memory test systems are optimized for volume production of memory semiconductors, a market where low-mix high-volume production is the norm, and feature industry-best parallelism (the ability to test a large number of semiconductors at the same time).
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Product
Memory
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Renesas offers MIL-STD-883-compliant CMOS random access memory (RAM) and CMOS programmable read-only memory (PROM) devices that are that are qualified to QML Class Q military standards.
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Product
High Speed & Precision Pressure Insensitive Mass Flow Module
D700MG
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Critical semiconductor manufacturing processes continuously desire precision gas flow control devices that enable both future innovation, and lab to fab transition of leading edge memory and logic device. HORIBA's propose the new pressure based MFC D700MG, the upper compatible model of the D500MG to support customer’s challenges.
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Product
8GB SO-DIMM DDR5-5600 262Pin 1GX16 1.1V Unbuffered Hynix Chip
AQD-SD5V8GN56-HC
Memory Module
Hynix Original Chip, Increased Banks and Burst Length, DDR5 5.6GT/s. Same-Bank Refresh, On-die ECC for Enhanced RAS.
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Product
16GB ECC DDR5-5600 2GX8 1.1V SAM
AQD-D5V16GE56-SB
Memory Module
SAM Original Chip, Anti-sulfuration, PCB: 30μ gold finger. Independent Power Management IC build-in, ECC function support.
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Product
8GB DDR4 SODIMM-3200 1GbX8 SAM
AQD-SD4U8GN32-SE
Memory Module
DDR4 3200Mhz Unbuffered SO-DIMM, 30u" Gold Plating Thickness, Anti-sulfurization resistance, 1.2V power consumption. Samsung original chip, 100% tested for stability, compatibility and performance.
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Product
16G SO-DDR5-5600 2GX8 1.1V SAM -20~85℃
AQD-SD5V16GN56-SBH
Memory Module
SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger. Anti-sulfuration, Semi Wide-temp Support -20~85℃.
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Product
8GB SO-DDR4-3200 1GbX8 1.2V ECC Samsung Chip
AQD-SD4U8GE32-SE
Memory Module
8GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, ECC.
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Product
4G DDR4-3200 512X16 1.2V SAM -20~85℃
AQD-SD4U4GN32-SP2
Memory Module
SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger. Anti-sulfuration, Semi Wide-temp Support -20~85℃.
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Product
USRP-2954, 10 MHz to 6 GHz, GPS-Disciplined OCXO, Reconfigurable USRP Software Defined Radio Device
783153-01
Software Defined Radio Device
The USRP-2954 provides an integrated hardware and software solution for rapidly prototyping high-performance wireless communication systems. Built on the LabVIEW reconfigurable I/O (RIO) architecture, USRP RIO delivers an integrated hardware and software solution, so researchers can prototype faster and shorten time to results. You can prototype a range of advanced research applications that include multiple input, multiple output (MIMO); synchronization of heterogeneous networks; LTE relaying; RF compressive sampling; spectrum sensing; cognitive radio; beamforming; and direction finding. The USRP-2954 is equipped with a GPS-disciplined 10 MHz oven-controlled crystal oscillator (OCXO) reference clock. The GPS disciplining delivers improved frequency accuracy and synchronization capabilities.
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Product
16GB SO-DDR4-3200 1GbX8 1.2V ECC Samsung Chip
AQD-SD4U16GE32-SE
Memory Module
16GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, ECC.
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Product
8GB SO-DDR5-5600 1GX16 1.1V SAM
AQD-SD5V8GN56-SC
Memory Module
SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
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Product
16GB SO-DDR4-3200 1GbX8 1.2V Samsung Chip
AQD-SD4U16GN32-SE
Memory Module
16GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
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Product
16GB DDR4-3200 1GbX8 1.2V Samsung Chip
AQD-D4U16GN32-SE
Memory Module
16GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
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Product
Wide Temperature Server DIMM
SQR-RD4M
Dual In-Line Memory Module (DIMM)
Original Hynix IC chip adopted, Wide operating temperature support -25~85oC, Data transfer rate up to 3200 MT/s.
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Product
USRP-2955, 10 MHz to 6 GHz, 80 MHz Bandwidth, GPS-Disciplined OCXO, Reconfigurable USRP Software Defined Radio Device
785264-01
Software Defined Radio Device
The USRP-2955 provides an integrated hardware and software solution for rapidly prototyping high-performance wireless receiver systems. It is designed for over-the-air signal acquisition and analysis. It features a two-stage superheterodyne architecture with four independent receiver channels and shares local oscillators for phase-coherent operation. It also offers a Kintex-7 FPGA programmable with the LabVIEW FPGA Module. With these features, the USRP-2955 has the RF and processing performance for applications such as spectrum monitoring, direction finding, signals intelligence, wideband recording, and radar prototyping. The USRP-2955 is equipped with a GPS-disciplined 10 MHz oven-controlled crystal oscillator (OCXO) Reference Clock, which improves frequency accuracy and synchronization.
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Product
USRP-2920, 20 MHz Bandwidth, 50 MHz to 2.2 GHz USRP Software Defined Radio Device
781906-01
Software Defined Radio Device
20 MHz Bandwidth, 50 MHz to 2.2 GHz USRP Software Defined Radio Device - The USRP‑2920 is a tunable RF transceiver with a high-speed analog‑to‑digital converter and digital‑to‑analog converter for streaming baseband I and Q signals to a host PC over 1 Gigabit Ethernet. You can also use the USRP‑2920 for the following applications: white space; broadcast FM; public safety; land-mobile, low-power unlicensed devices on industrial, scientific, and medical (ISM) bands; sensor networks; cell phone; amateur radio; or GPS.
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Product
16GB DDR5-5600 2GX8 1.1V SAM
AQD-D5V16GN56-SB
Memory Module
SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
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Product
32GB R-DDR5 5600 R-Dimm 2GX8 1.1V SAM
AQD-D5V32GR56-SB
Memory Module
SAM Original Chip, Industrial Design for Improved Reliability, Compatible with server platform, 30u” golden finger, Operating Temperature: 0°C ~ 85°C.
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Product
8GB DDR4-3200 1GbX8 1.2V Samsung Chip
AQD-D4U8GN32-SE
Memory Module
8GB, DDR 4 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
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Product
32G SO-DDR5-5600 2GX8 1.1V SAM -20~85℃
AQD-SD5V32GN56-SBH
Memory Module
SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger. Anti-sulfuration, Semi Wide-temp Support -20~85℃.
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Product
Memory Interposers
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Memory interposers for logic analyzers and oscilloscopes are ordered by memory type. Please select the memory type/technology of interest.
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Product
Memory Tester
SP3000
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CST is proud to offer a portable stand alone and affordable memory tester, combining DIMM and SODIMM testing capability all on the same universal base unit with optional easy plug-on test adapters.
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Product
SODIMM DDR4 3200MT/s
SQR-SD4S
Dual In-Line Memory Module (DIMM)
Original Hynix IC chips adopted, Data transfer rate: 3200MT/s. Capacity: 4/8/16/32GB, Operating temperature: 0 °C ~ 85 °C Lifetime warranty.
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Product
Memory Products
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The electronic systems we use today require some form of memory for data and software storage. As a leading supplier of high-quality memory products, we offer a broad portfolio of serial EEPROM, serial EERAM, parallel EEPROM, OTP EPROM, serial Flash, parallel Flash, serial SRAM, NVSRAM, and CryptoMemory® security ICs to meet your memory needs. We also offer the industry’s first commercially available serial memory controller for use in high-performance data center computing applications. Our extensive testing protocols have ensured industry-leading robustness and endurance along with best-in-class quality to provide you with reliable products, dependable technical support and a consistent supply of devices throughout your product’s lifecycle.
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Product
32GB DDR5-5600 2GX8 1.1V SAM
AQD-D5V32GN56-SB
Memory Module
SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
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Product
4G DDR4 2400 288Pin 512MBX8 1.2V Registered Samsung Chip
AQD-D4U4GR24-SG
Memory Module
DDR4-2400 Registered DIMM. – standard height, 30μ" gold plating thickness (IPC-2221 Standard) 1.2V power consumption. Low-power auto self- refresh (LPASR) Provides better reliability, availability and serviceability (RAS) and improves data integrity.
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Product
Memory And Storage
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Intel provides technically advanced products that support every level of computing—from data center workloads to enthusiast usage. Intel® Optane™ memory creates an accelerated bridge between memory and storage. Intel® Solid State Drives (Intel® SSDs) provide storage flexibility, stability, and efficiency.
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Product
RightMark Memory Analyzer
RMMA
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Before this test packet was created there was no proper software for measuring vital system parameters such as CPU/Chipset/RAM providing steady and reliable (reproducible) test results and allowing for changing test parameters in a wide range. Vital low-level system characteristics include latency and real RAM bandwidth, average/minimal latency of different cache levels and its associativity, real L1-L2 cache bandwidth and TLB levels specs. Besides, these aspects are usually not paid sufficient attention in product technical documentation (CPU or chipset). Such test suite, which combines a good deal of subsets aimed at measuring objective system characteristics, is a must have for estimating crucial objective platform parameters.
