Flash Memory
retains data absent of power. Also known as: Flash Device
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Product
PLD ISP Feature, GTE 10.00p
K8220A
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The PLD ISP feature allows the test developer engineer to specify a configuration bitstream file in VCL digital test file, much like programming a Flash memory device. The PLD ISP feature supports multiple PLD configuration data formats are supported including. Serial Vector Format (SVF), Standard Test And Programming Language (STAPL), Jam, Jam Byte Code (JBC) object files.
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Product
Boundary-Scan Controller for PXI-Express 'Hybrid' Slots or Plug-In Controller for PXI-Express Peripheral Slot
JT 37×7/PXIE
Controller
High speed and performance JTAG Boundary-scan controller for PXI-Express ‘hybrid’ slots or plug-in controller for PXI-Express peripheral slot.The controllers are targeted at demanding manufacturing test applications, fast in-system flash memory programming and programmable logic configuration. The JT 37×7 is available in different operating levels (memory options) to suit your specific environment and application. Each unit is supplied with a four TAP port signal conditioning module the JT 2147 ‘QuadPOD‘The JT 37×7 DataBlasters are a family of high speed and performance, up to 40 MHz TCK, boundary-scan controllers. Besides being available as bench-top unit with USB/E-net/FireWire interface, these controllers also come as 19″ rack-mountable instrument with the same three interafces and as plug-in cards in PXI(e)and PCI(e) formats.
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Product
32GB R-DDR5 5600 R-Dimm 2GX8 1.1V SAM
AQD-D5V32GR56-SB
Memory Module
SAM Original Chip, Industrial Design for Improved Reliability, Compatible with server platform, 30u” golden finger, Operating Temperature: 0°C ~ 85°C.
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Product
DataBlaster PCI / PCIE JTAG Boundary-Scan Controller
JT 37x7/PCI
Controller
High speed and performance JTAG Boundary-scan PCI PC plug-in controller for PCI bus slot or PCIe PC plug-in controller for PCI Express bus slot.The controllers are targeted at demanding manufacturing test applications, fast in-system flash memory programming and programmable logic configuration. The JT 37×7 is available in different operating levels (memory options) to suit your specific environment and application. Each unit is supplied with a four TAP port signal conditioning module the JT 2147 ‘QuadPOD‘
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Product
8GB DDR4 SODIMM-3200 1GbX8 SAM
AQD-SD4U8GN32-SE
Memory Module
DDR4 3200Mhz Unbuffered SO-DIMM, 30u" Gold Plating Thickness, Anti-sulfurization resistance, 1.2V power consumption. Samsung original chip, 100% tested for stability, compatibility and performance.
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Product
RunCore Embedded PATA “Elite Series” SSD
2.5"PATA/IDE SSD
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RunCore Innovation Technology Co. Ltd.
2.5” PATA SSD incorporates advanced flash controller and NAND flash memory technology to deliver a state-of-the-art, non-volatile mass storage device. It supports capacity from 32GB to 128GB. 2.5” PATA Plus SSD contains the cache size of up to 64MB with maximum transfer rate as high as 95MB/s. Furthermore, its characteristics of low power consumption and anti-vibration are obvious.
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Product
32GB DDR5-5600 2GX8 1.1V SAM
AQD-D5V32GN56-SB
Memory Module
SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
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Product
8GB SO-DDR5-5600 1GX16 1.1V SAM
AQD-SD5V8GN56-SC
Memory Module
SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
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Product
8GB SO-DDR4-3200 1GbX8 1.2V ECC Samsung Chip
AQD-SD4U8GE32-SE
Memory Module
8GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, ECC.
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Product
32G SO-DDR5-5600 2GX8 1.1V SAM -20~85℃
AQD-SD5V32GN56-SBH
Memory Module
SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger. Anti-sulfuration, Semi Wide-temp Support -20~85℃.
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Product
8GB DDR4-3200 1GbX8 1.2V Samsung Chip
AQD-D4U8GN32-SE
Memory Module
8GB, DDR 4 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
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Product
16GB SO-DDR5-5600 2GX8 1.1V SAM
AQD-SD5V16GN56-SB
Memory Module
SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
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Product
16GB SO-DDR4-3200 1GbX8 1.2V ECC Samsung Chip
AQD-SD4U16GE32-SE
Memory Module
16GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, ECC.
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Product
Multifunctional Meter
AEM-DR
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Provide high accuracy measurement, display and remote communication of single phase & three phase parameters (V, A, P, Q, S, PF, Hz, Kwh). Multicircuit design and relay output modular expansion design decrease the overall cost and make the functionality more flexible. All monitored data is available via a RS485 serial , for the needs in energy management, alarming, and remote controlling. Embedded flash memory for Data-Logging can avoid any data missing once the communication is interrupted. Moreover, its ultra compact size DIN-rail mounting makes itself mountable in virtually any panel, enclosure or indoor Cabinet.
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Product
16GB DDR4-3200 1GbX8 1.2V ECC Samsung Chip
AQD-D4U16GE32-SE
Memory Module
16GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, ECC.
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Product
16GB DDR5-5600 2GX8 1.1V SAM
AQD-D5V16GN56-SB
Memory Module
SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
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Product
8GB SO-DIMM DDR5-5600 262Pin 1GX16 1.1V Unbuffered Hynix Chip
AQD-SD5V8GN56-HC
Memory Module
Hynix Original Chip, Increased Banks and Burst Length, DDR5 5.6GT/s. Same-Bank Refresh, On-die ECC for Enhanced RAS.
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Product
4G DDR4-3200 512X16 1.2V SAM -20~85℃
AQD-SD4U4GN32-SP2
Memory Module
SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger. Anti-sulfuration, Semi Wide-temp Support -20~85℃.
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Product
16GB SO-DDR4-3200 1GbX8 1.2V Samsung Chip
AQD-SD4U16GN32-SE
Memory Module
16GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
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Product
16GB ECC DDR5-5600 2GX8 1.1V SAM
AQD-D5V16GE56-SB
Memory Module
SAM Original Chip, Anti-sulfuration, PCB: 30μ gold finger. Independent Power Management IC build-in, ECC function support.
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Product
Memory
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Renesas is renowned for its product lifetimes, and our memory products are no different. Our wide range of low power SRAM products provide high reliability, stable supply and long lifetime support often not found in these devices, making them ideal for industrial designs. Renesas’ ultra-fast QDR™ (Quad Data Rate) SRAMs are ideal for next-generation high bandwidth communication systems that require memories capable of very high operating frequencies combined with low latencies and full cycle utilization. Our EEPROM realizes high speed, low power consumption and a high level of reliability by employing advanced MONOS memory technology, a CMOS process and low voltage circuitry technology.
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Product
16GB ECC SO-DDR5-5600 2GX8 1.1V SAM
AQD-SD5V16GE56-SB
Memory Module
SAM Original Chip, Anti-sulfuration, PCB: 30μ gold finger. Independent Power Management IC build-in, ECC function support.
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Product
4G DDR4 2400 288Pin 512MBX8 1.2V Registered Samsung Chip
AQD-D4U4GR24-SG
Memory Module
DDR4-2400 Registered DIMM. – standard height, 30μ" gold plating thickness (IPC-2221 Standard) 1.2V power consumption. Low-power auto self- refresh (LPASR) Provides better reliability, availability and serviceability (RAS) and improves data integrity.
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Product
Flash In Disk-IDE
FID Series
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Axiomtek's FID (Flash in Disk-ATA) series is a high performance 2.5 flash disk and fully compatible with IDE standard which make it an ideal replacement for conventional IDE HDD without any driver or system modification. This 2.5 IDE flash disk is provided with huge capacities up to 256GB to meet diverse needs of data storage. With the features of high capacity storage, data integrity, anti-vibration and low power consumption, the FID series is surely a solid solution for expanding an industrial computers memory.
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Product
16G R-DDR4-3200 1GX8 1.2V Samsung Chip -40~85C
AQD-D4U16R32-SEW
Memory Module
Registered DIMM, 30u" Gold Plating Thickness, Anti-sulfurization resistance. 1.2V power consumption, Samsung original chip, wide temperatures from -40° to 85°C.
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Product
Universal Flash Storage
UFS
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Universal Flash Storage (UFS) is a JEDEC standard for high performance mobile storage devices suitable for next generation data storage. The UFS is also adopted by MIPI as a data transfer standard designed for mobile systems. Most UFS applications require large storage capacity for data and boot code. Applications include mobile phones, tablets, DSC, PMP, MP3, and other applications requiring mass storage, boot storage, XiP or external cards. The UFS standard is a simple, but high-performance, serial interface that efficiently moves data between a host processor and mass storage devices. USF transfers follow the SCSI model, but with a subset of SCSI commands.The Arasan UFS IP family consists of Host controller IP, Device controller IP, and MPHY.
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Product
Flash Photolysis Spectrometer
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Vernier Software & Technology, LLC
The Vernier Flash Photolysis Spectrometer is a simple, user-friendly device for demonstrating the fundamental principles of chemical kinetics and photochemistry to undergraduate chemistry students.
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Product
Arc Flash Monitoring
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Arc fault protection for the fast clearance of arcing faults on BUS bars & within metal clad switchgear & associated cable boxes. The arc is detected using an optical sensor & the signal input to a protection device which alsomonitors the load current on the system.
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Product
AC Flash Tester
THPG
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Very Heavy Duty with high milliamp capacity for properly testing motors and windings.
