Materials Development Corporation
MDC continues to improve both the hardware and software for C-V measurements and analyses of semiconductor devices. Taking full advantage of the latest C-V measuring instruments and more powerful computers, MDC offers the widest variety of C-V and I-V measurement systems available.
- 818.700.8290
- (775) 854-2585
- info@mdc4cv.com
- 21541 Nordhoff St.
B
Chatsworth, CA 91311
United States of America
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Product
Software
Srive-Level Capacitance Profiling (DLCP) Measurement
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Materials Development Corporation
Drive-levelcapacitance profiling is an extremely useful technique to characterize amorphoussilicon or other semiconductor material with large concentrations of deep band gap states.
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Product
C-V Plotters
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Materials Development Corporation
MDC will tailor your CSM/Win Semiconductor Measurement System for your exact requirements. Choose the best capacitance meter, output device, and probe station for your needs. All CSM/Win C-V plotters feature the latest Dell Computers. The computer and capacitance meters are rackmounted in one compact enclosure. When ordered with a hot chuck or probe station, MDC can deliver a turnkey system of unparalleled performance.
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Product
Hot Chucks
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Materials Development Corporation
Probe stations to suit all measurement requirementswhether production, engineering or research. See individual data sheets for more details.
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Product
Semiconductor CharacterizationSystem
Keithley 4200
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Materials Development Corporation
The MDC CSM/Win-4200 System integrates the extraordinary power of the CSM/Win softwarewith the power of the new Keithley 4200-SCS. Measure capacitance, voltage, and current down to sub-femtoamp levels.
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Product
Software
Junction Measurement and Analysis
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Materials Development Corporation
A comprehensive set of analyses for junction diode or Schottky barriers begins with C-V data gathering that adjusts the voltage step to the slope of the C-V characteristics. This assures an optimum set of C-Vdata whether the voltage range is small or large. Doping profile and resistivity profile are both available at the touch of a key. Plots of 1/C2 - V or Log(C) - Log (V+ phi) show doping uniformity and doping slope factor. Exclusive recalculation options allow adjustment of stray capacitance and area to facilitate calibration using a standard reference wafer of known doping or resistivity.
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Product
Software
Triangular Voltage Sweep (TVS) Option
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Materials Development Corporation
The TVS method measures the current-voltage characteristics of an MOS device at high temperature. This technique, which allows direct measurement of mobile ionmovement, has higher sensitivity and is much faster than the conventional CVBT measurement.
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Product
Software
Ion Implant Analysis Option
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Materials Development Corporation
Computes active dose, range, and straggle. Can model implants with various doses, energies and cap materials. Overlays theoretical and actual plots.
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Product
Software
Gate Oxide Integrity Option
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Materials Development Corporation
Oxide integrity of MOS devices can be evaluated by various techniques such as Time Dependent DielectricBreakdown, Charge to Breakdown, or ramped voltage. When used with a prober, map distribution of breakdown fields. Output the data using histograms, cumulativefailure, or Weibull plots.
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Product
Software
MOS C-V Measurement and Analysis
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Materials Development Corporation
MOS capacitance-voltage measurement is one of the most common process monitoring diagnostics employed in device manufacturing. A vast amount of information can be derived from this simple test.
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Product
Software
Quasi-Static Measurements
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Materials Development Corporation
The Quasi-static measurement ompares a high frequency capacitance-voltage plot to a C-V plot measured near zero Hertz (quasi-static). By analyzing the difference in the depletion region of the curves, the interface trap density (Dit) can be determined in the sample under test.
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Product
Software
Interface Trap Density Analysis Option
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Materials Development Corporation
MDC offers interface trap density analysis using both the Conductance-Frequency and Quasi-statictechniques. The Conductance-Frequency method is recommended for fine-tuning of processes where the highest resolution is needed. The Quasi-static technique is recommended where moderate to high levels of interface traps are monitored, such as in radiation damage studies. Requires quasi-static option or variable frequency option.
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Product
Cryogenic Probe Station
CryoPro
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Materials Development Corporation
The MDC Model 441 Cryogenic Probe Station is a cost effective alternative to high-priced vacuum based cryogenic probe stations. With up to five probes available and sample diameters up to six inches, the MDC Cryogenic Probe Station allows for electrical measurements at temperatures near liquid nitrogen levels (77K).
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Product
Software
MOS Doping Profile Analysis
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Materials Development Corporation
MDC uses the comprehensive Ziegler algorithm toconvert pulsed MOS C-V data to a doping profile. The doping profile is accurate from the oxide semiconductor interface to the maximum depletion depth and is therefore useful for low dose ion implant monitoring. Peak doping, range, and total active dose are computed. The technique is sensitive enough to resolve changes in the substrate doping profile due to redistribution during oxidation.
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Product
Software
TFT Test Systems
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Materials Development Corporation
Model CSM/Win-TFT TEST SYSTEMS allows electrical measurements of thin film transistors (TFT's) used in flat panel displays (FPD's). MDC TFT TEST SYSTEMS can quickly and efficiently measure critical transistor parameters without the need for expensive parametric testers. Various model TFT TEST SYSTEMS are available for testing both linear and saturation characteristics to find parameters like ION, IOFF, mobility, and threshold voltage.
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Product
ReferenceWafer
RW10
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Materials Development Corporation
MDC presents the RW10 Reference Wafer. A range of capacitors, resistors and semiconductor devices can bemeasured to verify the repeatability and accuracy of measurement systems. The MDC Model RW10 Reference Wafer is not actually a "wafer". It has the shape of a wafer and it includes capacitors, resistors, MOS devices, and a junction device in a wafer configuration to allow rapid verification of proper operation for capacitance-voltage and current-voltage instrumentation.
