Materials Development Corporation
MDC continues to improve both the hardware and software for C-V measurements and analyses of semiconductor devices. Taking full advantage of the latest C-V measuring instruments and more powerful computers, MDC offers the widest variety of C-V and I-V measurement systems available.
- 818.700.8290
- (775) 854-2585
- info@mdc4cv.com
- 21541 Nordhoff St.
B
Chatsworth, CA 91311
United States of America
Categories
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ReferenceWafer
RW10
Materials Development Corporation
MDC presents the RW10 Reference Wafer. A range of capacitors, resistors and semiconductor devices can bemeasured to verify the repeatability and accuracy of measurement systems. The MDC Model RW10 Reference Wafer is not actually a "wafer". It has the shape of a wafer and it includes capacitors, resistors, MOS devices, and a junction device in a wafer configuration to allow rapid verification of proper operation for capacitance-voltage and current-voltage instrumentation.
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Interface Trap Density Analysis Option
Materials Development Corporation
MDC offers interface trap density analysis using both the Conductance-Frequency and Quasi-statictechniques. The Conductance-Frequency method is recommended for fine-tuning of processes where the highest resolution is needed. The Quasi-static technique is recommended where moderate to high levels of interface traps are monitored, such as in radiation damage studies. Requires quasi-static option or variable frequency option.
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Triangular Voltage Sweep (TVS) Option
Materials Development Corporation
The TVS method measures the current-voltage characteristics of an MOS device at high temperature. This technique, which allows direct measurement of mobile ionmovement, has higher sensitivity and is much faster than the conventional CVBT measurement.
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Conductance Measurement and Analysis
Materials Development Corporation
MDC uses conductance to give a complete picture of MOS devices as well as to correct for series resistance effects. MDC C-V plotters use conductance and capacitance measurements to plot true device capacitance and depletion region conductance.
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Mercury Probes
Materials Development Corporation
MERCURY PROBES are precision instruments that enable rapid, convenient, and non-destructive measurements of semiconductor samples by probing wafers with mercury to form contacts of well-defined area.
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Hot Chucks
Materials Development Corporation
Probe stations to suit all measurement requirementswhether production, engineering or research. See individual data sheets for more details.
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MOS C-V Measurement and Analysis
Materials Development Corporation
MOS capacitance-voltage measurement is one of the most common process monitoring diagnostics employed in device manufacturing. A vast amount of information can be derived from this simple test.
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Overlay Plots
Materials Development Corporation
The overlay option gives the user the ability to overlay several plots on one graph for comparison. Simply click and drag the mouse from the MDC logo at the bottom right corner of a plot to an open area on the screen to produce the overlay plot. By dragging other plots to this overlay, each plot will be added.
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Junction Measurement and Analysis
Materials Development Corporation
A comprehensive set of analyses for junction diode or Schottky barriers begins with C-V data gathering that adjusts the voltage step to the slope of the C-V characteristics. This assures an optimum set of C-Vdata whether the voltage range is small or large. Doping profile and resistivity profile are both available at the touch of a key. Plots of 1/C2 - V or Log(C) - Log (V+ phi) show doping uniformity and doping slope factor. Exclusive recalculation options allow adjustment of stray capacitance and area to facilitate calibration using a standard reference wafer of known doping or resistivity.
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TFT Test Systems
Materials Development Corporation
Model CSM/Win-TFT TEST SYSTEMS allows electrical measurements of thin film transistors (TFT's) used in flat panel displays (FPD's). MDC TFT TEST SYSTEMS can quickly and efficiently measure critical transistor parameters without the need for expensive parametric testers. Various model TFT TEST SYSTEMS are available for testing both linear and saturation characteristics to find parameters like ION, IOFF, mobility, and threshold voltage.
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Electrochemistry Tests
Materials Development Corporation
CyclicVoltammetry and Galvanostatic Charging are tests used throughout the industrial and scientific communities to study chemical reactions and behavior of electronic structures. They are extremely helpful in the monitoring of nano based dielectrics, used in super /ultra capacitors or self-assembled monolayers (SAMs). The Cyclic Voltammetry test applies a ramping voltage to a device and measures the resulting current. In acapacitor-like structure the current reveals loss in the dielectric as well as degradation over time. CyclicVoltammetry is used to characterize the performance of supercapacitors and ultracapacitors formed using various nano-technologies. It is also useful in the studies of self-assembled monolayers used for sensors.
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Current-Voltage Measurement Option
Materials Development Corporation
CSM/Win Systems with an I-V option can measure both MOS and diode structures. For junctions, both forwardand reverse bias curves can be analyzed. Junction ideality factor, series resistance, and reverse saturation current are found. Solar cells can be checked for efficiency. Gate Oxide Integrity of MOS devices can be measured as well.
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Customized Software
Materials Development Corporation
If the software packages offered do not meet your specific needs,special software can be written for custom applications.The engineers and programmers at MDC candevelop or modify applications to fit your requirements. Examples include: *Customer specific measurements *Interfacing with required meters *Production versions of measurements *Interfacing with probers and other measurement platforms *Specialized requirements
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Srive-Level Capacitance Profiling (DLCP) Measurement
Materials Development Corporation
Drive-levelcapacitance profiling is an extremely useful technique to characterize amorphoussilicon or other semiconductor material with large concentrations of deep band gap states.
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Production Triangular Voltage Sweep (TVS) Option
Materials Development Corporation
In traditional TVS measurements, the operator must select the end points of the mobile ion peak todetermine the area to analyze. Though the selection of these points is a simple matter for the operator, the required input precludes using this technique in asemi-autonomous production environment. The goal of TVS Production testing is the rapid determination of mobile charge concentration with little or no operator input. The test methodology must be compatible with production environments where accuracy, easeof use, and minimum operator involvement are of paramount concern. Also, the possibility of automated wafer handling must be considered.
