Materials Development Corporation
MDC continues to improve both the hardware and software for C-V measurements and analyses of semiconductor devices. Taking full advantage of the latest C-V measuring instruments and more powerful computers, MDC offers the widest variety of C-V and I-V measurement systems available.
- 818.700.8290
- (775) 854-2585
- info@mdc4cv.com
- 21541 Nordhoff St.
B
Chatsworth, CA 91311
United States of America
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Product
Software
MOS Doping Profile Analysis
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Materials Development Corporation
MDC uses the comprehensive Ziegler algorithm toconvert pulsed MOS C-V data to a doping profile. The doping profile is accurate from the oxide semiconductor interface to the maximum depletion depth and is therefore useful for low dose ion implant monitoring. Peak doping, range, and total active dose are computed. The technique is sensitive enough to resolve changes in the substrate doping profile due to redistribution during oxidation.
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Product
Software
MOS C-V Measurement and Analysis
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Materials Development Corporation
MOS capacitance-voltage measurement is one of the most common process monitoring diagnostics employed in device manufacturing. A vast amount of information can be derived from this simple test.
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Product
Mercury Probes
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Materials Development Corporation
MERCURY PROBES are precision instruments that enable rapid, convenient, and non-destructive measurements of semiconductor samples by probing wafers with mercury to form contacts of well-defined area.
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Product
Four-Point Probe
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Materials Development Corporation
Materials Development Corporation offers the complete line of Four Point Probe systems from AIT. Systems are available to measue up to 12" diameter (300 mm) wafers as well as specialty systems for Photovoltaic wafers and substrates. For more information on these systems, contact MDC.
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Product
Software
Gate Oxide Integrity Option
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Materials Development Corporation
Oxide integrity of MOS devices can be evaluated by various techniques such as Time Dependent DielectricBreakdown, Charge to Breakdown, or ramped voltage. When used with a prober, map distribution of breakdown fields. Output the data using histograms, cumulativefailure, or Weibull plots.
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Product
Software
Junction Measurement and Analysis
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Materials Development Corporation
A comprehensive set of analyses for junction diode or Schottky barriers begins with C-V data gathering that adjusts the voltage step to the slope of the C-V characteristics. This assures an optimum set of C-Vdata whether the voltage range is small or large. Doping profile and resistivity profile are both available at the touch of a key. Plots of 1/C2 - V or Log(C) - Log (V+ phi) show doping uniformity and doping slope factor. Exclusive recalculation options allow adjustment of stray capacitance and area to facilitate calibration using a standard reference wafer of known doping or resistivity.
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Product
Software
Srive-Level Capacitance Profiling (DLCP) Measurement
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Materials Development Corporation
Drive-levelcapacitance profiling is an extremely useful technique to characterize amorphoussilicon or other semiconductor material with large concentrations of deep band gap states.
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Product
Cryogenic Probe Station
CryoPro
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Materials Development Corporation
The MDC Model 441 Cryogenic Probe Station is a cost effective alternative to high-priced vacuum based cryogenic probe stations. With up to five probes available and sample diameters up to six inches, the MDC Cryogenic Probe Station allows for electrical measurements at temperatures near liquid nitrogen levels (77K).
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Product
Software
Production C-V Measurement
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Materials Development Corporation
The production software offers a streamlined C-V plotting and bias-temperature stress program with minimumoperator input. A single keystroke begins the measurement.
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Product
Software
Interface Trap Density Analysis Option
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Materials Development Corporation
MDC offers interface trap density analysis using both the Conductance-Frequency and Quasi-statictechniques. The Conductance-Frequency method is recommended for fine-tuning of processes where the highest resolution is needed. The Quasi-static technique is recommended where moderate to high levels of interface traps are monitored, such as in radiation damage studies. Requires quasi-static option or variable frequency option.
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Product
Software
Ion Implant Analysis Option
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Materials Development Corporation
Computes active dose, range, and straggle. Can model implants with various doses, energies and cap materials. Overlays theoretical and actual plots.
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Product
Software
MOS Capacitance-Time Measurement and Analysis
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Materials Development Corporation
The Capacitance-Time transient resulting from an MOS device pulsed into deep depletion reveals important information about bulk properties of the semiconductor and about damage or contaminants introduced during processing.
