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GaN
Gallium Nitride is a stable wide bandgap semiconductor material. Also known as: Gallium Nitride
See Also: LED, Transistor
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Broadband High Power Amplifiers
Chengdu KeyLink Microwave Technology Co., Ltd.
KeyLink's broadband high power amplifiers are available for operating frequencies from 1 MHz to 18 GHz. Power levels for octave and multi-octave designs range from 2 watts to over 500 watts. Based on state-of-the-art GaN, GaAs, LDMOS power devices and MMICs, KeyLink designs and manufactures SSPA(solid state power amplifiers ) with excellent performance in terms of high efficiency over ultra-wide working band, high reliability and ruggedness.
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Narrow band & Linear SSPA
Exodus Advanced Communications
Exodus Narrowband CW and Linearized SSPA products feature LDMOS, GaN,GaAsFET discrete and Chip & Wire Hybrid technologies covering frequency ranges from 1MHz to 26.5GHz at power levels exceeding 1KW for Modules and 10KW for Systems
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Amplifiers
We have designed and manufactured amplifiers using all major semiconductor materials, LDMOS, GaN, GaAs, and InP, to produce narrow, wideband, and pulse, receive and transmit amplifiers from 1 MHz to 220 GHz and power levels from mW to over 10 kW.
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High Voltage Optically Isolated Probe, 1 GHz Bandwidth. Includes soft-carrying case.
DL10-ISO
The DL-ISO enables highest confidence in GaN and SiC device characterization with highest accuracy, best signal fidelity, and comprehensive connectivity.
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DL-ISO 10 Vpp MMCX Tip
DL-ISO-10V-TIP
- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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Solid State Broadband High Power Amplifier
Model 2215
The 2215 is suitable for octave bandwidth high power CW, modulated, and pulse applications. This amplifier utilizes high power GaN devices that provide wide frequency response, high gain, high peak power capability, and low distortions. Exceptional performance, long-term reliability and high efficiency are achieved by employing advanced broadband RF matching networks and combining techniques, EMI/RFI filters, and all qualified components. The amplifier is constructed within a single 5RU drawerincluding the forced air-cooling. Available operating voltage configurations are single-phase 220 VAC up to 400 Hz and 28 VDC.
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Pulsed SSPA
Exodus Advanced Communications
Exodus Pulse SSPA products feature LDMOS and GaN discrete and Chip & Wire technologies covering frequency ranges from 1MHz to 12GHz at power levels exceeding 1KW for Modules and 10KW for Systems.
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GaN Amplifiers
SBP-3233831838-KFKF-E1-HR
Model SBP-3233831838-KFKF-E1-HR is a power amplifier with a typical small signal gain of 18 dB and a nominal Psat of +38 dBm across the frequency range of 32 to 38 GHz. The DC power requirement for the amplifier is +30 VDC/2 A. The mechanical configuration is an inline structure with K(F) connector as its input port and output port. Other port configurations, such as K connectors and WR-28 waveguides for either the input or output, are also available under different model numbers.
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Silicon & Compound Wafers
Compound semiconductors are undergoing a major expansion addressing many new applications and using various materials such as SiC, GaN, GaAs and others, to improve the performance of new devices in several segments such as Power and Face Recognition.
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Solid-State High Power Amplifier 18 - 26.5 GHz
AMP4065LC-2
Exodus Advanced Communications
Designed for EMI/RFI, lab, and general communication applications. Exodus Broadband SSPA product feature GaN, GaAsFET discrete and Chip & Wire Hybrid technologies covering one octave through decades frequency ranges from Operating Frequency Range 18.0-26.5 GHz.
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Power Management Controller
Macom Technology Solutions Holdings Inc.
Hghly integrated Power Management Integrated Circuit for GaN Power Amplifier
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Osram High Power Blue Violet Laser Diodes (450-488nm)
The Optoelectronics Company Ltd
OSRAM Opto Semiconductors is a key player in the field of visible InGaN (Indium Gallium Nitride) lasers. OSRAM Opto Semiconductors offer leading product performance and innovative packaging. Thanks to their excellent beam quality, OSRAM laser diodes are ideally suited for the optical imaging of light. Not only that, but their small package size is particularly beneficial to highly compact systems, such as pico projectors. OSRAM laser diodes offer high efficiency and long lifetime: due to their excellent efficiency (ratio of light produced compared to electric power consumed), the temperature increase experienced by blue InGaN lasers during operation is kept to an absolute minimum, allowing them to deliver a long life – up to 10,000 hours at 40 °C.
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MPI Sorter Series
MPI’s Sorter Series are improving production efficiency and yields for market sectors related to LED chip, package production, discrete device handling, and IC substrate manufacturing. Deploying MPI’s Pick & Place technology, the Sorter Line offers dedicated sorting and defect inspection solutions particularly suited for GaN, GaAs, Vertical LED Chip, Flip Chip, and Laser Diode applications. With a proven heritage of and market-advanced technologies, MPI offers competitive and differentiated solutions that are scalable and cost-effective.
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Space Power Solutions
Teledyne e2v HiRel Electronics (HiRel) offers leading edge power solutions dedicated for high-reliability applications. The introduction of Galium Nitride (GaN) technology solutions enable high power density designs with four times less space requirements than traditional MOSFETs. The Teledyne HiRel Point-of-Load (POL) products combine multiple load capabilities, outstanding radiation performance with high levels of integration and easy to use features.
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RF Amplifiers up to 6000 MHz
Includes RF and microwave amplifiers covering the band from 500Mhz to 6000Mhz in a single module with either GaN or GaAs devices. Custom and standard power amplifiers available with high linearity, low noise figure, and very low error vector magnitude (EVM). Our rack systems and select modules include Automatic Gain Control (AGC), Automatic Level Control (ALC), and peak/pulse/average detection useful in OTA, MIMO, and CTIA testing.
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Substrate Manufacturing
KLA’s substrate manufacturing portfolio includes defect inspection and review, metrology and data management systems that help substrate manufacturers manage quality throughout the wafer fabrication process. Specialized wafer inspection and review tools assess wafer surface quality and detect, count and bin defects during production and as a critical part of outgoing wafer qualification. Wafer geometry systems ensure the wafer shape is extremely flat and uniform in thickness, with precisely controlled wafer shape topography. Data analysis and management systems proactively identify substrate fabrication process excursions that can lead to yield loss. KLA’s substrate manufacturing systems support process development, production monitoring and final quality check of a broad range of substrate types and sizes including silicon, prime silicon, SOI, sapphire, glass, GaAs, SiC, GaN, InP, GaSb, Ge, LiTaO3, LiNBO3, and epitaxial wafers.
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DL-ISO 200 Vpp MMCX Tip
DL-ISO-200V-TIP
- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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Microscope Photoluminescence Spectrometer
Flex One
Photoluminescence (PL) is the light emission from a material under the excitation by ultraviolet, visible or near infrared radiation. In semiconductor luminescent property measurements, the sample (e.g. GaN, ZnO, GaAs etc.) was usually excited by a laser (with a wavelength of 325 nm, 532 nm, 785 nm etc.), and its PL spectrum is measured to analyze the optical physical properties, such as the band gap width etc.. Photoluminescence is a high sensitivity, non-destructive analysis method, which can provide the information about the structure, composition and surrounding atomic arrangement of materials. Therefore, it is widely used in physics, materials science, chemistry and molecular biology and other related fields.
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High Frequency Amplifiers (> 6 GHz)
Qorvo's portfolio of amplifiers that operate over 6 GHz includes both GaAs and GaN devices, available in die and package forms.
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Solid State Broadband High Power Amplifier 1900 - 6000 MHz / 200 Watts
2215
The 2215 is suitable for octave bandwidth high power CW, modulated and pulse applications. This amplifier utilizes high power GaN devices that provide wide frequency response, high gain, high peak power capability and low distortions. Exceptional performance, long-term reliability and high efficiency are achieved by employing advanced broadband RF matching networks and combining techniques, EMI/RFI filters, and all qualified components. for EMC, RF Product Test, Communications and Electronic Warfare applications.
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Power Amplifiers
Analog Devices MMIC-based GaN and GaAs power amplifiers cover the low hundred MHz frequency range up through and including components in the W band (75 GHz to 110 GHz). In addition to components, our portfolio also includes GaN-based power amplifier modules with output power exceeding 8 kW. Designed for excellent linearity at high output power, our power amplifiers maintain good heat dissipation and high reliability at elevated temperatures for the wide variety of wired and wireless applications that they are used in.
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High-Power CW Amplifiers
Our family of solid-state power amplifiers (SSPAs) utilizes proprietary technology and a proven building block approach that enables rapid customization to specific requirements. The world-class design team understands the tradeoffs between GaAs versus GaN and FET versus MMIC to quickly achieve the right design for the right problem. Whether you need a connectorized compact GaN SSPA or an integrated SSPA assembly, we have the technical know-how to deliver on-time and on-budget.
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Solid-State RF amplifier module for High Power Testing
Exodus Advanced Communications
Exodus introduces the AMP1071 - a Solid-State RF amplifier module covering the entire ultra-wide 2.0-20.0GHz frequency range instantaneously at 20W CW minimum. Using State of the Art GaN devices, the AMP1071 operates from a 32VDC source at less than 10A consumption. This module is suitable for use with all single channel modulation standards and applications requiring high power and ultra-wide band coverage. It has built-in protection circuits, high reliability and ruggedness. Typical applications include High Power Testing, EMI/RFI, EW and Communications and Jamming.
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500 MHz 60 V Common Mode Differential Probe
DL05-HCM
60 V of common mode and 80 V differential input range with 1 GHz of bandwidth, make these probes ideal for lower voltage GaN power conversion measurements. The 60 V of common mode is well suited for handling any float of the battery and bulk/absorption voltage during charging, while the 80 V differential input range provide margin for any overshoot.
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Rad Hard GaN FETs
Wide band gap semiconductor technologies such as Gallim Nitride Field Effect Transistors (GaN FETs) have been gaining interest for power management and conversion in space applications. These devices feature higher breakdown voltage, lower RDS(ON) and very low gate charge enabling power management systems to operate at higher switching frequencies while still achieving higher efficiency and a smaller solution footprint. There is an additional benefit from GaN devices that make them attractive to the space market. These devices are inherently immune to total ionizing dose radiation.
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SSPAs / LNAs / Broadband
SSPAs based on the latest Galium Nitride (GaN) technology offer the best combination of high peak powers, high reliability, high efficiency, and soft degradation. High efficiency and high power are hallmarks of GaN technology, enabling SSPAs to challenge traditional tube-based amplifiers across the design spectrum. In addition the long lifetime from these devices, combined with the gradual degradation should individual devices fail, provide unparalleled service lifetime. Techniques such as bias modulation and linearization provide even better prime-power efficiency while still meeting the demanding requirements of pulsed or CW applications.
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Saluki SPA Series Solid State Power Amplifier (max. 23KW output power)
Saluki SPA series is a solid-state RF power amplifier with an output frequency of maximum 110GHz and an output power of a maximum of 23000W. Its design is based on the most advanced GaN technology in the industry, and its power output is efficient and reliable. The product has functions such as temperature and current detection, alarm protection and so on.The broadband solid state power amplifier is mainly used for testing and measuring instruments, Communication or interference, aviation control and other fields.*Customization Available*
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ST/MT Family
MT System is a configurable test equipment suitable to verify static and dynamic parameters of power semiconductors (i.e. IGBT, MOSFET, DIODE, THYRISTOR, SiC, GaN, etc) packaged and unpackaged (discrete, module and substrate). ST System is a test equipment suitable to verify stability or drift of all static parameters of discrete power semiconductors.
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Ultra Broadband SSPA
Exodus Advanced Communications
Exodus Chip & Wire Hybrid ultra broadband amplifiers feature GaN, GaAsFET discrete die on ceramic substrate covering frequency ranges from 4GHz to 26.5GHz and power levels exceeding 500W.
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Solid State Power Amplifiers
Skylink SSPAs incorporate state-of-art DPD and well-done Heat Dissipation technologies with available LDMOS, GaN & GaAs Chips. Solutions of SSPA frequency range from 9kHz to 50GHz and output power up to kilowatts and includes basic PA modules to integrated chassis with embedded software for local and remote control and monitoring.
