Deposition
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Copper Pillar Bump
Like in conventional fabrication, integrated circuits are created on the wafer but near the end of the manufacturing process, the attachment pads are metalized on the surface of the chips to make them more receptive to solder. Then solder dots are deposited on each of the pads, and chips are cut, flipped, and positioned so that the solder balls are facing the connectors on the external circuitry.
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Reticle Manufacturing
An error-free reticle (also known as a photomask or mask) represents a critical element in achieving high semiconductor device yields, since reticle defects or pattern placement errors can be replicated in many die on production wafers. Reticles are built upon blanks: substrates of quartz deposited with absorber films. KLA’s portfolio of reticle inspection, metrology and data analytics systems help blank, reticle and IC manufacturers identify reticle defects and pattern placement errors, thereby reducing yield risk.
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In-Situ Spectroscopic Ellipsometer for Real-Time Thin Film Monitoring
UVISEL Plus In-Situ
The UVISEL Plus in-situ spectroscopic ellipsometer can be easily mounted on process chambers (PECVD, MOCVD, sputter, evaporation, ALD, MBE) for the real-time control of thin film deposition or etch processes.The UVISEL Plus in-situ provides the unique combinations of very high speed, sensitivity, dynamic range and accuracy making the instrument able to control deposition / etch at the atomic layer thickness level, even for rapid processes.
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Optical Fiber Type Hot Phosphoric Acid Concentration Monitor
CS-620F
In 3D NAND manufacturing process, dozens of layers of SiO2 and SiN are deposited, and the SiN layer is selectively removed using hot phos.In this process, the desired etching rate can be achieved by controlling the concentration and temperature of the chemical solution.Previous products have difficulty to measure high temperature chemicals, but the CS-620F is able to measure at high temperatures up to 170 C degrees.
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Inline Wafer Testing
IL-800
Pre-process elimination of low-quality wafers using measured lifetime, trapping, and resistivity. Process control and optimization at dopant diffusion and nitride deposition steps.
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Process Sense™ NDIR End Point Detector For Chamber Clean
The Process Sense endpoint sensor is a small, low-cost SiF4 sensor specifically designed for Remote Plasma Chamber Clean Endpoint detection for silicon-based CVD deposition chambers. Process Sense is based on infrared absorption, the only technique applicable to all plasma cleaning processes (in-situ and remote). It gets mounted onto a bypass on the rough line, ensuring no effect on deposition hardware. The signal level reported by the Process Sense, which is proportional to SiF4 concentration, can be used to determine the completion of the chamber clean process.
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ICP Plasma System
The AXIC IsoLok® Inductively Coupled Plasma (ICP) Load-Locked Processing System from AXIC, Inc. defines a new concept in Deep Reactive Ion Etch (DRIE) and low temperature-low damage Plasma Enhanced Chemical Vapor Deposition (ICP-PECVD) plasma processing. The system is based on a modular design starting with a universal chamber and cabinet unit with ICP etch or deposition bottom electrodes available for easy installation into the chamber unit combined with a load-lock. We are confident you will find the ease of use, variety of plasma processes, serviceability and attractive pricing unsurpassed by any other plasma product in the market.
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Dynamic Scale Deposition Loop System
Dynamic Scale Deposition Loop fully automated systems includes hardware and software to measure and evaluate the performance of scale inhibitors under high pressure and high temperature conditions.
