GaN
Gallium Nitride is a stable wide bandgap semiconductor material. Also known as: Gallium Nitride
See Also: LED, Transistor
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Product
Standard GaN Amplifiers
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A GaN (Gallium Nitride) amplifier is a power amplifier that uses GaN, a wide-bandgap semiconductor material, to provide high power density, efficiency, and frequency capabilities.
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Product
Rad Hard GaN FETs
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Wide band gap semiconductor technologies such as Gallim Nitride Field Effect Transistors (GaN FETs) have been gaining interest for power management and conversion in space applications. These devices feature higher breakdown voltage, lower RDS(ON) and very low gate charge enabling power management systems to operate at higher switching frequencies while still achieving higher efficiency and a smaller solution footprint. There is an additional benefit from GaN devices that make them attractive to the space market. These devices are inherently immune to total ionizing dose radiation.
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GaN substrates
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Sumitomo Electric Industries, Ltd.
Gallium Nitride (GaN) substrates are widely used for optical devices in the blue-violate to green ranges due to their excellent material characteristics. In recent years, GaN substrates have been drawing attention for power devices. Many development projects are underway.
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GaN Power Amplifiers > 5W
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Macom Technology Solutions Holdings Inc.
MACOM GaN RF power amplifier solutions are designed with the latest GaN-on-SiC and GaN-on-Si technologies. Our MACOM PURE CARBIDE series of GaN-on-SiC power amplifiers offers high performance and reliability for the most demanding applications. Our expanding GaN portfolio is designed to address the challenging requirements of Aerospace & Defense, Industrial, Scientific and Medical applications and 5G wireless infrastructure. MACOM GaN products deliver output power levels ranging from 2 W to over 7 kW and exhibit best in class RF performance with respect to gain and efficiency. For sensitive Aerospace & Defense applications MACOM can offer a US only supply chain with AS9100D Certification.
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Wideband GaN Amplifiers
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The Teledyne RF & Microwave family of GaN-based amplifiers maximizes power density and efficiency, and establishes a new benchmark for small size in the 0.1 to 6.0 GHz range that operates over multi octave. With dimensions of 2.5"L x 2"W x 0.42"H at only 2.1 cubic inches, these modular, non-ITAR GaN amplifiers maintain the rugged design characteristics needed for harsh airborne and land based requirements.
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GaN 100W Power Amplifiers
PE15A5033F
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The PE15A5033F is a 100 W high gain Class A/AB Coaxial Linear Power Amplifier operating in the 0.7 to 2.7 GHz frequency range. The amplifier offers 100 Watts typical saturated power and 45 dB minimum small signal gain with 1.5 dB typical gain flatness @ Psat. The amplifier requires typically a +30V DC power supply. The SMA connectorized module is unconditionally stable and operates over the temperature range of 0C and +50C. The unit comes with a Heatsink and Fan.
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Product
Amplifiers
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We have designed and manufactured amplifiers using all major semiconductor materials, LDMOS, GaN, GaAs, and InP, to produce narrow, wideband, and pulse, receive and transmit amplifiers from 1 MHz to 220 GHz and power levels from mW to over 10 kW.
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Product
DL-ISO 10 Vpp MMCX Tip
DL-ISO-10V-TIP
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- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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Product
Power Device Analyzer / Curve Tracer
B1505A
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The Keysight B1505A Power Device Analyzer / Curve Tracer is the only single box solution available with the capability to characterize high power devices from the sub-picoamp level up to 10 kV and 1500 A. These capabilities allow evaluation of novel new device such as IGBT and materials such as GaN and SiC. The B1505A supports a variety of modules: high voltage SMU (HVSMU), high current SMU (HCSMU), ultra high current (UHC) module, ultra high voltage (UHV) module and high voltage medium current (HVMC) module. The B1505A also supports: high-power SMU (1 A/200 V), medium-power SMU (100 mA/100 V) ,medium-current SMU (1 A/30V pulsed, 100 mA/30V DC) and a multi-frequency capacitance measurement unit (1 kHz 5 MHz). Its ten-slot modular mainframe allows you to configure the B1505A to suit your measurement needs.
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Product
High Voltage Fiber Optic Probe, 150 MHz Bandwidth
HVFO108
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- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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Product
Rad Hard GaN Drivers
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The space market has been driving towards more efficient power management solutions. Part of the drive includes the use of Gallium Nitride Field Effect Transistors (GaN FETs) for power conversion. GaN FETs have higher power conversion efficiency and have more natural immunity to radiation, due to them being wide-bandgap semiconductors. Equally important is the use of the correct driver that will allow reliable operation and maximize the benefits of the GaN FETs. Some of the key driver requirements are: a well-regulated gate drive voltage; high source/sink current capability and a split driver output stage.
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Product
Solid-State High Power Amplifier 18 - 26.5 GHz
AMP4065LC-2
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Exodus Advanced Communications
Designed for EMI/RFI, lab, and general communication applications. Exodus Broadband SSPA product feature GaN, GaAsFET discrete and Chip & Wire Hybrid technologies covering one octave through decades frequency ranges from Operating Frequency Range 18.0-26.5 GHz.
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Product
Driver Amplifiers (< 3 W)
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Qorvo's driver amplifiers are designed to provide good linear or efficiency performance for gain stages prior to the final power amplifier in a transmitter chain. These products support frequencies up to 46 GHz, using process technologies such as InGaP HBT, power pHEMT, E/D pHEMT and GaN.
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Product
Ruggedized SSPA 4 to 8 GHz, 40 W GAN Hybrid Module
AMP1110
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Exodus Advanced Communications
Ruggedized Solid State Power Amplifier. Our Best in Class Power Amplifier AMP1110 a 4 to 8 GHz, 40 W Minimum Saturated Power output module. The AMP1110 is a Class AB linear GaN hybrid design with instantaneous bandwidth. Other features include 4.0dB Peak to Peak flatness and 12A Max Consumption. This AMP1110 has Built-in protection circuits, high reliability and ruggedness. It is suitable for any application such as EW, EMI/RFI Lab, and High Power testing.
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Power Amplifiers
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Analog Devices MMIC-based GaN and GaAs power amplifiers cover the low hundred MHz frequency range up through and including components in the W band (75 GHz to 110 GHz). In addition to components, our portfolio also includes GaN-based power amplifier modules with output power exceeding 8 kW. Designed for excellent linearity at high output power, our power amplifiers maintain good heat dissipation and high reliability at elevated temperatures for the wide variety of wired and wireless applications that they are used in.
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Product
Solid State Broadband High Power Amplifier
Model 2215
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The 2215 is suitable for octave bandwidth high power CW, modulated, and pulse applications. This amplifier utilizes high power GaN devices that provide wide frequency response, high gain, high peak power capability, and low distortions. Exceptional performance, long-term reliability and high efficiency are achieved by employing advanced broadband RF matching networks and combining techniques, EMI/RFI filters, and all qualified components. The amplifier is constructed within a single 5RU drawerincluding the forced air-cooling. Available operating voltage configurations are single-phase 220 VAC up to 400 Hz and 28 VDC.
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Product
60 V Common Mode Differential Probes
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The 60 V Common Mode Differential Probes are the ideal probes for lower voltage GaN power conversion measurement with the highest accuracy, best CMRR, and lowest noise.
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Product
Semiconductor Curve Tracer
CS-8000 Series
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The CS-8000 series are equipped with a high-voltage source of up to 5 kV and a high-current source of 2 kA. It features Pulse output, Gate pattern, and very small current measurement capabilities, and it supports the design evaluation of wideband-gap semiconductors such as SiC and GaN.
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Product
ST/MT Family
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MT System is a configurable test equipment suitable to verify static and dynamic parameters of power semiconductors (i.e. IGBT, MOSFET, DIODE, THYRISTOR, SiC, GaN, etc) packaged and unpackaged (discrete, module and substrate). ST System is a test equipment suitable to verify stability or drift of all static parameters of discrete power semiconductors.
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Test & Measurement Instrument Amplifiers
MPA-series
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The MPA-series Test & Measurement Instrument Amplifiers are based on state-of-the-art GaN PA modules and operate from 0.7 to 26.5 GHz (multiple frequency options are available). They provide High continuous power across the band, high linearity for wideband communications testing, have variable gain adjustment and a high-resolution display shows amplifier status. Amplifiers offer a wide range of application-specific requirements including simultaneous high-power, wide bandwidth, low harmonic power and high linearity.
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Product
DL-ISO 2 Vpp MMCX Tip
DL-ISO-2V-TIP
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- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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Product
High Voltage Optically Isolated Probe, 700 MHz Bandwidth. Includes soft-carrying case.
DL07-ISO
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The DL-ISO enables highest confidence in GaN and SiC device characterization with highest accuracy, best signal fidelity, and comprehensive connectivity.
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Product
Microscope Photoluminescence Spectrometer
Flex One
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Photoluminescence (PL) is the light emission from a material under the excitation by ultraviolet, visible or near infrared radiation. In semiconductor luminescent property measurements, the sample (e.g. GaN, ZnO, GaAs etc.) was usually excited by a laser (with a wavelength of 325 nm, 532 nm, 785 nm etc.), and its PL spectrum is measured to analyze the optical physical properties, such as the band gap width etc.. Photoluminescence is a high sensitivity, non-destructive analysis method, which can provide the information about the structure, composition and surrounding atomic arrangement of materials. Therefore, it is widely used in physics, materials science, chemistry and molecular biology and other related fields.
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Product
SSPAs / LNAs / Broadband
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SSPAs based on the latest Galium Nitride (GaN) technology offer the best combination of high peak powers, high reliability, high efficiency, and soft degradation. High efficiency and high power are hallmarks of GaN technology, enabling SSPAs to challenge traditional tube-based amplifiers across the design spectrum. In addition the long lifetime from these devices, combined with the gradual degradation should individual devices fail, provide unparalleled service lifetime. Techniques such as bias modulation and linearization provide even better prime-power efficiency while still meeting the demanding requirements of pulsed or CW applications.
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High Throughput Test Platform for Multi-Site & Index Parallel Applications
ETS-88
Test Platform
The ETS-88 is an optimal test platform for testing a wide variety of devices including: simple analog, high precision, high voltage, high current / power, automotive, video, audio, complex mixed-signal, as well as emerging power processes like SiC and GaN.
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GaN Amplifiers
SBP-3233831838-KFKF-E1-HR
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Model SBP-3233831838-KFKF-E1-HR is a power amplifier with a typical small signal gain of 18 dB and a nominal Psat of +38 dBm across the frequency range of 32 to 38 GHz. The DC power requirement for the amplifier is +30 VDC/2 A. The mechanical configuration is an inline structure with K(F) connector as its input port and output port. Other port configurations, such as K connectors and WR-28 waveguides for either the input or output, are also available under different model numbers.
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Solid State GaN (Gallium Nitride) Amplifiers
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Fairview Microwave’s solid state GaN (Gallium Nitride) power amplifiers (also called SSPAs) feature broad frequency bands ranging from 30 MHz to 7.5 GHz and very high gain levels from 43 to 60 dB. These GaN SSPAs also show impressive harmonic response (-15 to -20 dBc) under worst case conditions. Saturated output power levels range from 10W to 100W with 20% to 35% Power Added Efficiency (PAE). All of our high power solid state GaN amplifiers from Fairview have internally regulated single voltage supplies. Our GaN SSPAs are designed to withstand environmental conditions such as humidity, altitude, shock and vibration with an operating temperature ranges from -40°C to +85°C. Some models are also equipped with integrated heat sinks and cooling fans. Most designs are EAR99.
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Silicon & Compound Wafers
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Compound semiconductors are undergoing a major expansion addressing many new applications and using various materials such as SiC, GaN, GaAs and others, to improve the performance of new devices in several segments such as Power and Face Recognition.
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RF Devices that deliver Comprehensive Solutions for Wireless Systems
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Sumitomo Electric Industries, Ltd.
GaN HEMTs, GaAs FETs , MMICs, and low-noise HEMT solutions offer high performance and uncompromised reliability for radar, base stations, SATCOM, point to point, and space applications.
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Product
Broadband High Power Amplifiers
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Chengdu KeyLink Microwave Technology Co., Ltd.
KeyLink's broadband high power amplifiers are available for operating frequencies from 1 MHz to 18 GHz. Power levels for octave and multi-octave designs range from 2 watts to over 500 watts. Based on state-of-the-art GaN, GaAs, LDMOS power devices and MMICs, KeyLink designs and manufactures SSPA(solid state power amplifiers ) with excellent performance in terms of high efficiency over ultra-wide working band, high reliability and ruggedness.
