Zener Diode
current flow from cathode to anode reverses when zener voltage reached.
See Also: Diode, Laser Diode, Diode Test, Photodiode
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25G DFB Laser Diode Chips
Guilin GLsun Science and Tech Group Co., LTD
25G DFB Laser Diode Chips by GLSN
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Laser Diode Modules: 635nm-660nm Visible Wavlength, Elliptical Beam
The Optoelectronics Company Ltd
Custom lasing wavelengths, from 405 nm to 852 nm, output power options and laser engraving are available to your specifications. Both standard and custom configurations provide OEMs, end-users and systems integrators with complete cost-effective laser solutions.
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Planar-Doped Barrier Diode Detector, 10 MHz to 12 GHz
8471E
The Keysight 8471E is a low-cost, planar-doped barrier detector offering excellent performance from 10 MHz to 12 GHz. It has an SMA male input connector and an SMC male output connector.
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Varactor Tuning Diodes
Macom Technology Solutions Holdings Inc.
MACOM’s GaAs and Silicon varactor tuning diodes provide broadband performance ranging from 10 MHz to 70 GHz. They are ideal for high Q filter and VCO electronic tuning circuits and are available in die form, flip chip, plastic and ceramic packaging. These GaAs diodes boast a constant gamma series for higher frequency and high Q applications and silicon abrupt and hyper abrupt series in plastic packaging are suitable for high volume surface mount applications.
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Diode Laser Spectroscopy
Diode Laser Spectroscopy by Mesa Photonics: Herriott Cell and OEM laser diode controller boards.
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CW IMPATT DIODES FROM 30 TO 140 GHz
Insight Product Company offers IMPATT diodes with CW power up to 400 mW and operational frequency range up to 140 GHz. Silicon p+-p-n-n+ IMPATT diodes are designed to be used in the millimeter wave oscillators and amplifiers. They are fabricated in the metal-ruby packages with hard-lead carrier (diameter 3.0 mm, 1.5 mm).
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SP3T RF Pin Diode Switches To 18 GHz
Pulsar Microwave manufactures 3-way absorptive and reflective switches for use in 50-ohm systems. These SP3T switches operate from 100 MHz to 18 GHz and handle 200 mW input power. VSWR performance is often 1.6:1 or better with 100 ns switching time. Minimum isolation of 60 dB is specified for most units. Absorptive and reflective switches require +5V and -5V power supply to function. Control logic is from 0 to +5 volts. All voltage and ground connections are made by feed thru and turret terminals, respectively.
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Modules - Modules, Diode
Diode modules from Vishay feature a range of technologies including FRED Pt®, HEXFRED®, and high performance Schottky, with reverse voltage ratings up to 2500 V and forward current ratings up to 600 A.
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THz Diodes
Macom Technology Solutions Holdings Inc.
The intrinsic cutoff frequencies of these Schottky junction devices exceed 1 THz, making them well-suited for use in mixers and detectors operating in the frequency bands from 60 GHz into the hundreds of GHz bands.
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Handheld Digital Multimeter, AC/DC Voltage, Continuity, Diode, Resistance, Temperature, 3.5, 2000
72-13435
*Clear LCD Display*Equipped with comfortable protective cover, test probe holder*2m drop test, precision protection*Auto Power Off*Auto Backlight Off*Loud Buzzer Sound*Knobs shift smoothly, in-line with ergonomics*Powered by AAA 1.5V x 2 batteries*12-month limited warranty *view Terms & Conditions for details
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MOSFETs, MESFETs, and Schottky Diodes
Semiconductor Module
The Semiconductor Module allows for detailed analysis of semiconductor device operation at the fundamental physics level. The module is based on the drift-diffusion equations, using isothermal or nonisothermal transport models. It is useful for simulating a range of practical devices including bipolar, metal semiconductor field-effect transistors (MESFETs), metal-oxide-semiconductor field-effect transistors (MOSFETs), Schottky diodes, thyristors, and P-N junctions.
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Low-Barrier Schottky Diode Detector, 10 MHz to 18 GHz
8470B
The Keysight 8470B 18 GHz Low-Barrier Schottky Diode (LBSD) detector has been widely used for many years in a variety of applications including leveling and power sensing. It offers good performance and ruggedness. Matched pairs (Option 001) offer very good detector tracking. A video load (Option 002) extends the square-law region to at least 0.1 mW (-10 dBm).
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Infrared Laser Diode Modules: 830nm-852nm, Elliptical Beam
The Optoelectronics Company Ltd
Custom lasing wavelengths, from 405 nm to 852 nm, output power options and laser engraving are available to your specifications. Both standard and custom configurations provide OEMs, end-users and systems integrators with complete cost-effective laser solutions.
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Spectral Single-Mode Diode Laser
The diode lasers are compact, single-mode light sources with a spectral width in the sub-MHz range (cw). A modulation input is optional. The wavelength for standard products is in the range 1530nm-1565nm (other wavelength can be tested).
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USHIO Blue Violet Laser Diodes (375nm - 405nm)
The Optoelectronics Company Ltd
The USHIO HL40071MG is a single transverse mode 405nm laser diode which offers 300mW optical output power in a 5.6mm package with typical optical and electrical characteristics, (Tc=25 degrees C, cw), of 50mA threshold current, operating current of 280mA, operating voltage 6.0V, 6 degrees beam divergence parallel to the junction, 15 degrees beam divergence perpendicular to the junction, laser diode reverse voltage of 2V and operating temperature of 0 to +70 degrees C.
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Bridge Rectifier Diodes
ST’s portfolio of bridge rectifier diodes is intended for primary bridges. In input primary bridge applications, ST's 1200V bridge diodes achieve very low conduction losses thanks to very low forward voltage characteristics. They can operate at up to +175 °C junction temperature, as a result of reduced leakage currents. Bridge rectifier diodes are belonging to the STPOWER family.
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Simulation Models for Passive Components, Transistors, Diodes, etc.
An indispensable collection of the industry''s most advanced simulation models for passive components, transistors, diodes and more. These reliable, measurement-based models maximize the RF/MW electronic design automation (EDA) process, reduce design cycle times, and lower product development cost. With a few EASY steps, the Modelithics Model Libraries are ready to use in EDA tools.
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520nm Green Direct Emission Laser Diode Modules
The Optoelectronics Company Ltd
Custom lasing wavelengths, from 405 nm to 852 nm, output power options and laser engraving are available to your specifications. Both standard and custom configurations provide OEMs, end-users and systems integrators with complete cost-effective laser solutions.
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High Voltage Diode Assemblies
High voltage diode assemblies are built by adding diodes in series to yield a higher peak inverse voltage. For example, if each diode is rated for 1200 peak inverse voltage (PIV), then six diodes in series would have a total peak inverse voltage of 7200 PIV. The detailed circuit is shown below.
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Low-Barrier Schottky Diode Detector, 10 MHz to 26.5 GHz
33330C
The Keysight 33330C low-barrier schottky diode detector has been widely used for many years in a variety of applications including leveling and power sensing. It offers good performance and ruggedness. Matched pairs (Option 001) offer very good detector tracking.
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Millimeter Wave Zero Bias GaAs Schottky Diode
HSCH-9161
The HSCH-9161 is suitable for medium-low barrier, zero bias detector applications. The HSCH-9161 is functional through W-band (110 GHz) and can be mounted in microstrip, finline, and coplanar circuits.
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PIN Diode Switches
After producing quality PIN diode switches in-house for many years, K&L Microwave is pleased to offer packaged options for customer applications. The offerings below are intended to highlight standard products; however, with our extensive in-house capabilities, custom parts are also available.
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LASER DIODE TESTER
LASER DIODE TESTER LD-607 Basic Functions LIV curve test. LD horizontal and vertical test. LD Spectrum test
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Laser Diode Drivers (LDD)
LDD technology has evolved from driving DVD/CD/Blue-ray optical drives to include laser projection in smartphones, automotive head-up displays (HUDs) and pico projectors. Renesas has developed new LDDs for RGB scanning laser projection systems and laser-based pico projectors. Automotive HUDs are benefiting from big innovations in MEMS projection systems and are now central to advanced driver assistance systems (ADAS) and safety. The latest laser scanned-MEMS projection systems can provide higher resolution images and at a lower cost.
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12 Pulse Diode Bridge Rectifiers Inside Fiberglass Plenums, P/N 5872C4-2
- 12 Pulse Diode Bridge Rectifier, P/N 5872C4-2- Each diode is rated for 60 Amps, 1800 Volts peak- Dimensions: 50″L x 40″W x 20″H approximately- Four 10″ fans are used for coolingFour 10″ fans will force cool from the bottom of the Plenum. 12 diode assemblies (each diode consists of nine diodes in series are integrated together inside the Plenum). The output is rated for 3000 VDC, 80 Amps.
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Step Recovery Diodes
Macom Technology Solutions Holdings Inc.
MACOM’s Silicon and GaAs varactor multiplier diodes provide broadband performance ranging from 10 MHz to 70 GHz. They are ideal for multiplier circuits and are available in die form, plastic and ceramic packaging. These diodes boast a flip chip series for higher frequency millimeter wave applications; plastic packaged series for microwave frequency surface mount applications; ceramic packaged series for high power waveguide and coaxial applications.
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Solid State PIN Diode Transfer Switch, 100 MHz to 18 GHz
P9400C
The Keysight P9400C solid state PIN diode transfer switch offers outstanding performance in terms of port-to-port isolation, switching speed and low insertion loss over a broad operating frequency range of 100 MHz to 18 GHz. The P9400C is particularly well suited for ultra-fast RF and microwave switching applications in instrumentation, communications, radar, switch matrices and various other test systems where high isolation, speed and lifetime of a switch is critical.
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External Cavity Diode Lasers
ECDLs
High-performance ECDLs and injection-locked optical amplifier.
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SP5T RF Pin Diode Switches To 12 GHz
Pulsar Microwave's 5-way RF switches cover bands from 300 MHz to 12 GHz in both absorptive and reflective configuration. These SP5T switches have a rating of 200 mW maximum input power and a switching time of 100 ns. They are specified with a minimum isolation of 60 dB and most models maintain a VSWR of 1.6:1 or better on all ports. The SP5T switches are driven by TTL logic control circuitry and require both positive and negative 5-volt supplies for operation. A 9-pin D-SUB connector provides the interface for the power and logic voltages.
