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Product
Memory Test System
T5835
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The new T5835 has full testing functionality, from package testing to high-speed wafer testing, for any memory ICs with operating speeds up to 5.4 Gbps, including all next-generation memories from NAND flash devices to DDR-DRAM and LPDDR-DRAM. It can handle 768 devices simultaneously for final package-level testing. It additionally features functions such as an enhanced programmable power supply (PPS) for advanced mobile memories, and a real-time DQS vs. DQ function to improve yield.
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Product
Memory Test Systems
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ICs that record and retain data are called memory devices. Our memory test systems are optimized for volume production of memory semiconductors, a market where low-mix high-volume production is the norm, and feature industry-best parallelism (the ability to test a large number of semiconductors at the same time).
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Product
Flash Memory Test System
T5830
Test System
T5830 memory tester, the latest member of its T5800 product family, optimized for testing a wide range of flash memory devices used in mobile electronic devices. The highly flexible T5830 tester has all of the capabilities needed to perform wafer sorting and final testing of price-sensitive flash memories.
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Product
Memory Test System
T5851/T5851ES
Test System
The T5851 system is designed to provide a cost-effective test solution for evaluating high-speed protocol NAND flash memories including UFS3.0 universal flash storage and PCIe Gen 4 NVMe solid-state drives (SSD), both of which are expected to be in high demand for the LTE 5G communications market.
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Product
DDR4 Pro Memory Test Adapter
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This memory test adapter for the RAMCHECK LX includes an extraordinarily rugged test socket for many thousands of insertion/removal cycles.
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Product
Memory Test System
T5511
Test System
Offering Multi-functionality and Industry's Top Test Speed of 8Gbps.
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Product
Memory Test System
T5230
Test System
T5230 memory test system for NAND/NVM devices adopts a combined array architecture to achieve best-in-class cost-of-test performance for wafer test, including wafer-level burn-in (WLBI) and built-in self-test (BIST). The system can perform on-wafer test of 1,024 memory devices per test head in parallel, delivering high productivity and enabling floor space savings of up to 86%. Multiple test cells are connected per system controller in the T5230, allowing independent wafer test of each test cell. The test cells can be stored in a general multi-wafer prober while minimizing the test cell floor space, and the tester can be docked with probers in both linear and multi-stack configurations. For functional tests at a maximum test rate of 125MHz/250Mbps, the T5230 assures high timing accuracy, repeatability, and failure detection capability.
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Product
Memory Test System
T5833/T5833ES
Test System
T5833 system is a cost-efficient, high-volume test solution capable of performing both wafer sort and final test of DRAM and NAND flash memory devices. Amid surging sales of mobile electronics, DRAMs, NAND flash memories and multi-chip packages (MCPs) — the main device types used in smart phones and tablets — are quickly evolving toward higher speeds and greater device capacity. Internet and cloud servers also are driving demand for faster, higher-capacity ICs. Yet the cost of testing today's wide array of memory devices is an obstacle for chipmakers, which urgently require solutions that can deliver high functionality, high performance and low cost of test (COT). Advantest's new, multifunctional T5833 memory test system meets these needs, delivering both wafer sort and final test capabilities for a full range of memory devices, including LPDDR3-DRAMs, high-speed NAND flash memories and next-generation non-volatile memory ICs.
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Product
Memory Test System
T5221
Test System
The T5521 is a memory test system that supports wafer test and wafer burn-in test of non-volatile memory devices such as NAND flash, housed within a multi-wafer prober to reduce test floor footprint.
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Product
High Throughput 1 ns Pulsed IV Memory Test Solution
NX5730A
Test Platform
Precise and fast characterization of new memory, such as spin transfer torque magneto resistive random access memory (STT-MRAM) from DC to high-speed pulsed IV measurement on silicon wafers Apply accurate and high-speed pulsed voltages (down to 1 ns pulse) to magnetic tunnel junction (MTJ) for STT-MRAM and precisely measure the resistance of MTJ Perform all typical MTJ characterization tests in one solution10 to 100 times faster cycle test, such as a bit error rate test (BERT)Capture and visualize MTJ switching waveforms clearly during the writing pulse Dedicated solution with Keysight Technologies’ technical expertise
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Product
Ultra-high Performance Solution for Memory Device Test
Magnum EPIC
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Teradyne’s Magnum EPIC is a high-performance test solution for latest generation DRAM devices. These devices are key enablers for technologies like 5G, AI, cloud computing, autonomous vehicles, AR/VR and applications with high definition graphics.
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Product
Memory Test Software
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Teradyne’s customers count on us for our Near Device Under Test (DUT) technology that gives memory device manufacturers a guaranteed performance advantage. A brief description of dynamic memory and storage memory devices will highlight why device manufacturers depend on Teradyne’s memory test solutions.
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Product
Memory Test System
T5830/T5830ES
Test System
Highly flexible tester which has all of the capabilities needed to perform wafer sorting and final testing of price-sensitive flash memories
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Product
Parallel Memory Test Solution
Magnum2
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Teradyne’s Magnum 2 test system delivers high throughput and high parallel test efficiency for high performance non-volatile memories, static RAM memories and logic devices.
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Product
High-Speed Memory Test Solution
UltraFLEX-M
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The UltraFLEX-M builds on the advanced test technology and architecture of the proven UltraFLEX test system to ensure high test quality at the lowest cost of test for high-speed memory devices.
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Product
Memory Test Systems
T5503HS2
Test System
Semiconductor memories are in high demand to meet the needs of fast-growing end markets such as portable electronics and servers. It has been forecasted that applications ranging from mobile devices and data centers to automobiles, gaming systems and graphics cards will consume an estimated 120 billion gigabits of DRAM capacity. To meet this market demand, new generations of memories with data-transfer speeds of 6.4 Gbps and higher are being developed. Advantest’s second-generation T5503HS2 tester is designed to handle these ultra-high-speed memory ICs.
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Product
Memory Test System
T5801
Test System
Capable of Testing Ultra-High-Speed DRAM Devices, Supporting Next-Generation GDDR7, LPDDR6, and DDR6 Technologies
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Product
32GB R-DDR5 5600 R-Dimm 2GX8 1.1V SAM
AQD-D5V32GR56-SB
Memory Module
SAM Original Chip, Industrial Design for Improved Reliability, Compatible with server platform, 30u” golden finger, Operating Temperature: 0°C ~ 85°C.
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Product
8GB DDR4 SODIMM-3200 1GbX8 SAM
AQD-SD4U8GN32-SE
Memory Module
DDR4 3200Mhz Unbuffered SO-DIMM, 30u" Gold Plating Thickness, Anti-sulfurization resistance, 1.2V power consumption. Samsung original chip, 100% tested for stability, compatibility and performance.
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Product
32GB DDR5-5600 2GX8 1.1V SAM
AQD-D5V32GN56-SB
Memory Module
SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
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Product
8GB SO-DDR5-5600 1GX16 1.1V SAM
AQD-SD5V8GN56-SC
Memory Module
SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
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Product
8GB SO-DDR4-3200 1GbX8 1.2V ECC Samsung Chip
AQD-SD4U8GE32-SE
Memory Module
8GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, ECC.
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Product
32G SO-DDR5-5600 2GX8 1.1V SAM -20~85℃
AQD-SD5V32GN56-SBH
Memory Module
SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger. Anti-sulfuration, Semi Wide-temp Support -20~85℃.
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Product
8GB DDR4-3200 1GbX8 1.2V Samsung Chip
AQD-D4U8GN32-SE
Memory Module
8GB, DDR 4 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
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Product
NI Real-Time Test Cell Reference System
778820-35
test
DIAdem Advanced with DAC Bundle, Perpetual License, Include 1 Year SSP
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Product
Fast and Flexible WLAN Measurements up to 802.11ax
WLAN Test Toolkit
test
The WLAN Test Toolkit gives you direct and fine control over the generation and analysis of IEEE 802.11a/b/g/n/ac and ax signals, as well as 802.11j/p/ah/af waveforms, with industry-leading speed and accuracy. It empowers you to characterize, validate, and test a variety of WLAN connectivity products, such as RF front end components, wireless modules, and user devices.The toolkit includes extensive support for the latest features of the 802.11ax standard, including extended single-user packets, multiuser OFDMA, and multiuser multiple input, multiple output (MIMO) functionality with per-user configuration and measurement results. The WLAN Test Toolkit helps you solve demanding new access point test cases by generating signals that simulate multiuser environments, including per-user impairments. You can also use the new software to generate trigger frames to test the real-time response of client devices and make power precorrection and relative center frequency measurements.
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Product
Application Software for Electronic Test & Instrumentation
test
Application software provides configuration-based workflows for electronic test and instrumentation applications. Application software is part of the NI software portfolio.
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Product
16GB SO-DDR5-5600 2GX8 1.1V SAM
AQD-SD5V16GN56-SB
Memory Module
SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
